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For the Inventor, By the Inventor

Tainan, Taiwan

Shyh-Fann Ting

This inventor holds 108 USPTO granted patents and 42 published patent applications, primarily in Image Sensor Technology (CPC class H01L27-1464). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., United Microelectronics Corp., National Cheng-Kung University. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shyh-Fann Ting. Retrieved from https://idiyas.com/inventor/shyh-fann-ting

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 108 

% Patents Active = 88.9

Average Co-Inventor Count = 6.3

ph-index = 9

Forward Citations = 345(Granted Patents)

Forward Citations (Not Self Cited) = 306(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Gangshan Township, Kaohsiung County, TW (2007 - 2009)
  • Kao-Hsiung Hsien, TW (2007 - 2010)
  • Kaohsiung County, TW (2009 - 2014)
  • Kaohsiung, TW (2005 - 2017)
  • Tai-Nan, TW (2009 - 2024)

Company Filing History:

goldMedal74 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal32 out of 7,288 
 
United Microelectronics Corp.
 patents
bronzeMedal1 out of 658 
 
National Cheng-Kung University
 patents
4. 1 out of 544 
 
National Science Council
 patents

Years Active: 2005-2026

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Areas of Expertise:
Image Sensor
Semiconductor Device
Pixel Design
Deep Trench Isolation
Noise Reduction
Polysilicon Gate
Backside Illuminated
Vertical Gate Transistor
Reflective Guide Layer
Bond Pad Structure
High Via Density
Full Well Capacity
108 patents (USPTO):Explore Patents
1. 12666733 - High aspect ratio back side deep trench isolaton structure with substrate-embedded metal grid and no pinch off (2026-06-23),
2. 12641906 - Tapered backside ground structure for pixel array (2026-05-26),
3. 12641891 - Semiconductor capacitor for image sensor pixel circuitry (2026-05-26),
4. 12635501 - Integrated chip including through-substrate via (TSV) and landing structure (2026-05-19),
5. 12635499 - Through substrate via landing on front end of line structure (2026-05-19),
6. 12550469 - Semiconductor device having isolation structures in pixel region and manufacturing method thereof (2026-02-10),
7. 12501722 - Image sensor with dummy polysilicon based extension pad (2025-12-16),
8. 12490537 - Image sensor having an improved structure for small pixel designs (2025-12-02),
9. 12464839 - Vertical gate field effect transistor (2025-11-04),
10. 12310137 - Isolation structure to increase image sensor performance (2025-05-20),
11. 12278250 - Semiconductor device including image sensor and method of forming the same (2025-04-14),
12. 12224298 - Bond pad structure with high via density (2025-02-11),
13. 12211876 - Extra doped region for back-side deep trench isolation (2025-01-28),
14. 12154927 - Semiconductor structure (2024-11-26),
15. 11996433 - Pad structure for front side illuminated image sensor (2024-05-28),

Title: The Innovative Journey of Inventor Shyh-Fann Ting

Introduction: Shyh-Fann Ting, a distinguished male inventor hailing from Tainan, Taiwan, has made significant contributions to the field of innovation with his groundbreaking ideas and inventions.

Latest Patents: Shyh-Fann Ting holds several patents in various technological domains, showcasing his continuous dedication to pushing the boundaries of innovation and creativity.

Career Highlights: Throughout his illustrious career, Shyh-Fann Ting has been recognized for his exceptional problem-solving skills and inventive mindset, leading to the development of cutting-edge technologies that have revolutionized industries.

Collaborations: Shyh-Fann Ting has collaborated with leading research institutions, universities, and companies worldwide, fostering a culture of innovation and knowledge exchange to drive progress in the field of technology.

Conclusion: In conclusion, Shyh-Fann Ting stands as a beacon of inspiration in the world of inventors, with his relentless pursuit of innovation and unwavering commitment to shaping a better future through his groundbreaking inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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