The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jun. 06, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen-Yu Chen, Kaohsiung, TW;
Yen-Ting Chiang, Tainan, TW;
Bai-Tao Huang, Hsinchu, TW;
Tse-Hua Lu, Zhubei, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Shyh-Fann Ting, Tainan, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Dun-Nian Yaung, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a substrate having a first side and a second side. The substrate includes a pixel region. A photodetector is in the pixel region. A first doped region is in the pixel region. A second doped region is in the pixel region. The second doped region is vertically between the first doped region and the first side of the substrate. A doped well is in the substrate and laterally surrounds the pixel region. The doped well is partially in the second doped region. A portion of the second doped region is vertically between the doped well and the second side of the substrate. A trench isolation structure is in the semiconductor substrate and laterally surrounds the pixel region. A footprint of the trench isolation structure is within a footprint of the doped well.