The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
May. 31, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen-Ting Chiang, Tainan, TW;
Yen-Yu Chen, Kaohsiung, TW;
Wen Hao Chang, Yunlin County, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Feng-Chi Hung, Chu-Bei, TW;
Shyh-Fann Ting, Tainan, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an image sensor including a plurality of photodetectors disposed within a substrate. The substrate comprises a front-side surface opposite a back-side surface. An outer isolation structure is disposed in the substrate and laterally surrounds the plurality of photodetectors. The outer isolation structure has a first height. An inner isolation structure is spaced between sidewalls of the outer isolation structure. The inner isolation structure is disposed between adjacent photodetectors in the plurality of photodetectors. The outer isolation structure and the inner isolation structure respectively extend from the back-side surface toward the front-side surface. The inner isolation structure comprises a second height less than the first height.