The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2012
Filed:
May. 20, 2009
Shyh-fann Ting, Tainan, TW;
Shih-chieh Hsu, Hsinchu, TW;
Cheng-tung Huang, Kaohsiung, TW;
Chih-chiang Wu, Taichung, TW;
Wen-han Hung, Kaohsiung, TW;
Meng-yi Wu, Kaohsiung Hsien, TW;
Li-shian Jeng, Taitung, TW;
Chung-min Shih, Tainan, TW;
Kun-hsien Lee, Tainan, TW;
Tzyy-ming Cheng, Hsinchu, TW;
Shyh-Fann Ting, Tainan, TW;
Shih-Chieh Hsu, Hsinchu, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Chih-Chiang Wu, Taichung, TW;
Wen-Han Hung, Kaohsiung, TW;
Meng-Yi Wu, Kaohsiung Hsien, TW;
Li-Shian Jeng, Taitung, TW;
Chung-Min Shih, Tainan, TW;
Kun-Hsien Lee, Tainan, TW;
Tzyy-Ming Cheng, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for forming a metal-oxide-semiconductor (MOS) device includes at least steps of forming a pair of trenches in a substrate at both sides of a gate structure, filling the trenches with a silicon germanium layer by a selective epitaxy growth process, forming a cap layer on the silicon germanium layer by a selective growth process, and forming a pair of source/drain regions by performing an ion implantation process. Hence, the undesirable effects caused by ion implantation can be mitigated.