Tainan, Taiwan

Chung-Min Shih


Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Innovative Breakthroughs by Chung-Min Shih

Introduction

Chung-Min Shih is an accomplished inventor based in Tainan, Taiwan. With a focus on advancing semiconductor technology, Shih has made significant contributions to the field through his innovative approach to metal-oxide-semiconductor (MOS) devices. His work is characterized by a dedication to enhancing device performance and reliability.

Latest Patents

Chung-Min Shih holds a patent for a method of forming a MOS device. This innovative method involves several key steps, including the formation of trenches in a substrate adjacent to a gate structure, the filling of these trenches with a silicon germanium layer using a selective epitaxy growth process, and the addition of a cap layer through a selective growth process. Furthermore, it involves creating source/drain regions via an ion implantation process, which effectively mitigates the undesirable effects caused by this process. This patent reflects Shih's contribution to improving semiconductor fabrication techniques.

Career Highlights

Chung-Min Shih's career is marked by his association with United Microelectronics Corporation, a leading firm in the semiconductor industry. His work at this company has positioned him as a noteworthy figure in technological advancements related to MOS devices. Shih's commitment to innovation is evident in his strategic approach to patent development and technology implementation.

Collaborations

Throughout his career, Chung-Min Shih has collaborated with talented coworkers, including Shyh-Fann Ting and Shih-Chieh Hsu. These partnerships underline the importance of teamwork in driving forward the development of cutting-edge technologies in the semiconductor field.

Conclusion

Chung-Min Shih exemplifies the spirit of innovation in the semiconductor industry. His patent concerning the method of forming MOS devices not only showcases his ingenuity but also contributes to the ongoing evolution of technology within this domain. Through his work and collaborations, Shih continues to influence the future of semiconductor advancements at United Microelectronics Corporation and beyond.

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