The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jan. 08, 2007
Shyh-fann Ting, Kaohsiung County, TW;
Cheng-tung Huang, Kaohsiung, TW;
Li-shian Jeng, Taitung, TW;
Kun-hsien Lee, Tainan, TW;
Wen-han Hung, Kaohsiung, TW;
Tzyy-ming Cheng, Hsincu, TW;
Shyh-Fann Ting, Kaohsiung County, TW;
Cheng-Tung Huang, Kaohsiung, TW;
Li-Shian Jeng, Taitung, TW;
Kun-Hsien Lee, Tainan, TW;
Wen-Han Hung, Kaohsiung, TW;
Tzyy-Ming Cheng, Hsincu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
The invention is directed to a method for manufacturing a semiconductor. The method comprises steps of providing a substrate having a gate structure formed thereon and forming a source/drain extension region in the substrate adjacent to the gate structure. A spacer is formed on the sidewall of the gate structure and a source/drain region is formed in the substrate adjacent to the spacer but away from the gate structure. A bevel carbon implantation process is performed to implant a plurality carbon atoms into the substrate and a metal silicide layer is formed on the gate structure and the source/drain region.