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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsi-Wen Tien

This inventor holds 69 USPTO granted patents and 22 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsi-Wen Tien. Retrieved from https://idiyas.com/inventor/hsi-wen-tien

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 69 

% Patents Active = 91.3

Average Co-Inventor Count = 5.5

ph-index = 4

Forward Citations = 57(Granted Patents)

Forward Citations (Not Self Cited) = 43(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hinchu County, TW (2020)
  • Xinfeng Township, TW (2016 - 2023)
  • Hsinchu, TW (2017 - 2023)
  • Xinfeng Twonship, TW (2021 - 2023)
  • Hsinchu County, TW (2016 - 2024)
  • Xinfeng Township, Hsinchu County, TW (2017 - 2024)

Company Filing History:

goldMedal69 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2026

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Areas of Expertise:
Semiconductor Devices
Interconnection Structures
Magnetic Tunnel Junction
MRAM Devices
Etching Techniques
Integrated Circuits
Self-Aligned Structures
Dual Etch-Stop Layers
Carbon-Containing Conductive Structures
Sidewall Spacer Structures
Protective Layer Deposition
Integrated Chip
69 patents (USPTO):Explore Patents
1. 12666947 - Semiconductor device including self-aligned via and method of manufacturing the same (2026-06-23),
2. 12635511 - Semiconductor device having air gap and method for manufacturing the same (2026-05-19),
3. 12635496 - Semiconductor device including interconnects with lower contact resistance (2026-05-19),
4. 12628630 - Interconnect structure with reinforcing spacer and method for manufacturing the same (2026-05-12),
5. 12543556 - Semiconductor devices and methods of forming the same (2026-02-03),
6. 12412831 - Semiconductor device structure and methods of forming the same (2025-09-09),
7. 12406924 - Interconnection structure and methods of forming the same (2025-09-02),
8. 12368046 - Method and structure of cut end with self-aligned double patterning (2025-07-22),
9. 12354881 - Methods of etching metals in semiconductor devices (2025-07-08),
10. 12310255 - Structure and method for an MRAM device with a multi-layer top electrode (2025-05-20),
11. 12302761 - Magnetic tunnel junction devices (2025-05-13),
12. 12300541 - Structure and formation method of semiconductor device with carbon-containing conductive structure (2025-05-13),
13. 12094823 - Interconnection structure and methods of forming the same (2024-09-17),
14. 11972975 - Semiconductor device structure having air gap and method for forming the same (2024-04-30),
15. 11915943 - Methods of etching metals in semiconductor devices (2024-02-27),

Title: Inventor Hsi-Wen Tien - Revolutionizing Technology in Hsinchu County

Introduction: Hsi-Wen Tien is a pioneering inventor based in Hsinchu County, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Tien's latest patents focus on advancements in semiconductor technology, particularly in the development of energy-efficient microchips for various electronic devices.

Career Highlights: With a career spanning over two decades, Tien has worked with leading tech companies and research institutions to bring her innovative ideas to life. Her work has significantly impacted the semiconductor industry.

Collaborations: Throughout her career, Tien has collaborated with top engineers, scientists, and researchers to push the boundaries of technology. Her collaborative efforts have led to the development of cutting-edge solutions in the semiconductor field.

Conclusion: Hsi-Wen Tien's dedication to innovation and her relentless pursuit of technological advancement have solidified her reputation as a trailblazer in the field of semiconductor technology. Her work continues to inspire the next generation of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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