The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jan. 18, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Hao Liao, Taichung, TW;

Hsi-Wen Tien, Xinfeng Township, Hsinchu County, TW;

Yu-Teng Dai, Hsinchu County, TW;

Chih-Wei Lu, Hsinchu, TW;

Hsin-Chieh Yao, Hsinchu, TW;

Hwei-Jay Chu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76876 (2013.01); H01L 23/5226 (2013.01); H01L 23/53276 (2013.01); H01L 21/28556 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76868 (2013.01); H01L 21/76883 (2013.01); H01L 21/76885 (2013.01);
Abstract

A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a conductive line over the substrate. The semiconductor device structure also includes a catalyst structure over the conductive line and a carbon-containing conductive via directly on the catalyst structure. The semiconductor device structure further includes a dielectric layer surrounding the carbon-containing conductive via.


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