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For the Inventor, By the Inventor

Taipei, Taiwan

Yu-Teng Dai

USPTO Granted Patents = 31 

Average Co-Inventor Count = 6.2

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal31 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2022-2025

where 'Filed Patents' based on already Granted Patents

31 patents (USPTO):
1. 12424488 - Dual etch-stop layer structure (2025-09-23),
2. 12406924 - Interconnection structure and methods of forming the same (2025-09-02),
3. 12362231 - Self-assembled dielectric on metal rie lines to increase reliability (2025-07-15),
4. 12322723 - Self-aligned interconnect structure (2025-06-03),
5. 12315817 - Dielectric on wire structure to increase processing window for overlying via (2025-05-27),
6. 12300611 - Interconnect conductive structure comprising two conductive materials (2025-05-13),
7. 12300541 - Structure and formation method of semiconductor device with carbon-containing conductive structure (2025-05-13),
8. 12266565 - Integrated chip with an etch-stop layer forming a cavity (2025-04-01),
9. 12243775 - Double patterning approach by direct metal etch (2025-03-04),
10. 12178051 - Magnetic random access memory and manufacturing method thereof (2024-12-24),
11. 12125795 - Integrated chip with inter-wire cavities (2024-10-22),
12. 12094823 - Interconnection structure and methods of forming the same (2024-09-17),
13. 11972975 - Semiconductor device structure having air gap and method for forming the same (2024-04-30),
14. 11942364 - Selective deposition of a protective layer to reduce interconnect structure critical dimensions (2024-03-26),
15. 11923293 - Barrier structure on interconnect wire to increase processing window for overlying via (2024-03-05),

Title: Innovations of Yu-Teng Dai: Pioneering Metal Interconnects and MRAM Technologies

Introduction

Yu-Teng Dai, based in New Taipei, Taiwan, is an accomplished inventor with a remarkable portfolio of 23 patents. His innovations primarily focus on advanced semiconductor technologies, particularly in the realm of metal interconnects and magnetic random access memories (MRAM).

Latest Patents

Among Yu-Teng Dai's latest patents is the "Double patterning approach by direct metal etch." This innovative method outlines a way to utilize direct metal etching to create and fill metal gaps efficiently. By directly etching metal layers, the method allows for reduced line width roughness, while enhancing reliability and RC performance, as well as minimizing parasitic capacitance. Another significant patent is for a "Magnetic random access memory and manufacturing method thereof," which details the process of forming a novel MRAM cell structure. This patent emphasizes the assembly of multiple insulating cover layers and interlayer dielectrics, ultimately facilitating efficient contact with the top electrode of the MRAM cell.

Career Highlights

Yu-Teng Dai currently contributes his expertise at Taiwan Semiconductor Manufacturing Company Limited. His role involves leading the development of cutting-edge semiconductor technologies that push the boundaries of current capabilities. With a strong focus on innovation, his work continues to significantly impact the semiconductor industry.

Collaborations

In the course of his career, Yu-Teng Dai has collaborated with esteemed colleagues, including Chung-Ju Lee and Wei-Hao Liao. These collaborations have fostered an environment of creativity and knowledge exchange, leading to fruitful inventions that enhance semiconductor manufacturing processes.

Conclusion

Yu-Teng Dai's contributions to the field of semiconductor technology, marked by his extensive patent portfolio, exemplify a commitment to innovation. His work not only pioneers advancements in metal interconnects and MRAM but also sets a remarkable standard for future developments in the industry.

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