The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
May. 07, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Wei-Hao Liao, Taichung, TW;
Hsi-Wen Tien, Hsinchu, TW;
Yu-Teng Dai, New Taipei, TW;
Chih Wei Lu, Hsinchu, TW;
Hsin-Chieh Yao, Hsinchu, TW;
Chung-Ju Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); H01L 21/7682 (2013.01); H01L 21/76885 (2013.01); H01L 29/41791 (2013.01); H01L 29/7851 (2013.01);
Abstract
An interconnection structure, along with methods of forming such, are described. The interconnection structure includes a first portion of a conductive layer, a second portion of the conductive layer disposed adjacent the first portion of the conductive layer, and a dielectric foam disposed between the first and second portions of the conductive layer. The dielectric foam includes fluid gaps filled with carbon dioxide gas.