The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Jul. 08, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Teng Dai, New Taipei, TW;

Hsi-Wen Tien, Xinfeng Township, TW;

Wei-Hao Liao, Taichung, TW;

Hsin-Chieh Yao, Hsinchu, TW;

Chih Wei Lu, Hsinchu, TW;

Chung-Ju Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/32139 (2013.01); H01L 21/76829 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01); H01L 21/76885 (2013.01);
Abstract

In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate, a second interconnect dielectric layer arranged over the first interconnect dielectric layer, and an interconnect conductive structure arranged within the second interconnect dielectric layer. The interconnect conductive structure includes an outer portion that includes a first conductive material. Further, the interconnect conductive structure includes a central portion having outermost sidewalls surrounding by the outer portion of the interconnect conductive structure. The central portion includes a second conductive material different than the first conductive material.


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