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For the Inventor, By the Inventor

Xinfeng, China

Hsi-Wen Tien

USPTO Granted Patents = 12 

Average Co-Inventor Count = 6.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal12 out of 40,850 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2024-2025

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12 patents (USPTO):Explore Patents
1. 12464954 - Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via (2025-11-04),
2. 12424488 - Dual etch-stop layer structure (2025-09-23),
3. 12362231 - Self-assembled dielectric on metal rie lines to increase reliability (2025-07-15),
4. 12322723 - Self-aligned interconnect structure (2025-06-03),
5. 12315817 - Dielectric on wire structure to increase processing window for overlying via (2025-05-27),
6. 12300611 - Interconnect conductive structure comprising two conductive materials (2025-05-13),
7. 12266565 - Integrated chip with an etch-stop layer forming a cavity (2025-04-01),
8. 12243775 - Double patterning approach by direct metal etch (2025-03-04),
9. 12125795 - Integrated chip with inter-wire cavities (2024-10-22),
10. 12074059 - Semiconductor arrangement and method of making (2024-08-27),
11. 11942364 - Selective deposition of a protective layer to reduce interconnect structure critical dimensions (2024-03-26),
12. 11923293 - Barrier structure on interconnect wire to increase processing window for overlying via (2024-03-05),

Title: Hsi-Wen Tien: Innovator in MRAM Technology

Introduction

Hsi-Wen Tien is a prominent inventor based in Xinfeng, China. He has made significant contributions to the field of memory technology, particularly in the development of magneto-resistive random-access memory (MRAM) devices. With a total of 12 patents to his name, Tien continues to push the boundaries of innovation in semiconductor technology.

Latest Patents

Hsi-Wen Tien's latest patents include groundbreaking advancements in MRAM devices. One notable patent describes an MRAM device that features a self-aligned top electrode via. This device comprises a bottom electrode situated over a substrate, a magnetic tunnel junction (MTJ) structure positioned on the bottom electrode, and a top electrode placed on the MTJ structure. Additionally, the MRAM device incorporates spacers on the sidewalls of both the top electrode and the MTJ structure, along with a first etch stop layer that covers the topmost surface of the spacers. Another significant patent involves a dual etch-stop layer structure within an integrated chip. This design includes a substrate, a first conductive wire within a dielectric layer, and multiple etch-stop layers that enhance the functionality and efficiency of the device.

Career Highlights

Hsi-Wen Tien is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of MRAM devices, which are crucial for modern computing applications.

Collaborations

Throughout his career, Tien has collaborated with notable colleagues, including Chung-Ju Lee and Wei-Hao Liao. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Hsi-Wen Tien's contributions to the field of MRAM technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to advancing semiconductor technology, making a lasting impact on the industry.

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