The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Jun. 16, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Hao Liao, Taichung, TW;
Hsi-Wen Tien, Xinfeng Township, TW;
Chih-Wei Lu, Hsinchu, TW;
Pin-Ren Dai, New Taipei, TW;
Chung-Ju Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of the top electrode and the MTJ structure. The MRAM device further includes a first etch stop layer on the spacers. A bottommost surface of the first etch stop layer covers a topmost surface of the spacers. In addition, the MRAM device includes a top electrode via on the top electrode and the first etch stop layer.