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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12302761 B1

PDFFull Text
Date of Patent:
May. 13, 2025

Filed:

Sep. 25, 2023

Magnetic tunnel junction devices

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsi-Wen Tien, Hsinchu County, TW;

Wei-Hao Liao, Taichung, TW;

Pin-Ren Dai, Hsinchu County, TW;

Chih-Wei Lu, Hsinchu, TW;

Chung-Ju Lee, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Tu-Tu V Ho

Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11C 11/16 (2006.01); H01L 23/522 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); H01L 23/5226 (2013.01); H10B 61/00 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

A device includes a first dielectric layer, a magnetic tunnel junction (MTJ), an oxide layer, a cap layer, and a second dielectric layer. The MTJ is over the first dielectric layer. The oxide layer is over the first dielectric layer. The cap layer is over the first dielectric layer. The cap layer is in contact with a sidewall of the MTJ and a sidewall of the oxide layer. The second dielectric layer is over the cap layer.

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Tien, Hsi-Wen. (2025). Magnetic tunnel junction devices (U.S. Patent No. 12302761). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12302761

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