The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Dec. 18, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Hsi-Wen Tien, Hsinchu County, TW;

Wei-Hao Liao, Hsinchu, TW;

Pin-Ren Dai, Hsinchu, TW;

Chih Wei Lu, Hsinchu, TW;

Chung-Ju Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0332 (2013.01); H01L 21/76877 (2013.01);
Abstract

Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises receiving a structure including a substrate and a first hard mask over the substrate, the first hard mask having at least two separate portions; forming spacers along sidewalls of the at least two portions of the first hard mask with a space between the spacers; forming a second hard mask in the space; forming a first cut in the at least two portions of the first hard mask; forming a second cut in the second hard mask; and depositing a cut hard mask in the first cut and the second cut.


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