The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

May. 26, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsi-Wen Tien, Hsinchu, TW;

Hwei-Jay Chu, Hsinchu, TW;

Chia-Tien Wu, Hsinchu, TW;

Yung-Hsu Wu, Hsinchu, TW;

Wei-Hao Liao, Hsinchu, TW;

Yu-Teng Dai, Hsinchu, TW;

Hsin-Chieh Yao, Hsinchu, TW;

Hsin-Ping Chen, Hsinchu, TW;

Chih-Wei Lu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/5283 (2013.01);
Abstract

A semiconductor device includes a substrate, an interconnect layer disposed over the substrate and including a metal line, and a dielectric layer disposed on the interconnect layer and including a via contact. The via contact is electrically connected to the metal line and has a first dimension in a first direction greater than a second dimension in a second direction. The first direction and the second direction are perpendicular to each other, and are both perpendicular to a longitudinal direction of the via contact.


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