The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Feb. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Wei Su, Taoyuan, TW;
Yung-Hsu Wu, Taipei, TW;
Hsin-Ping Chen, Hsinchu County, TW;
Chih Wei Lu, Hsinchu, TW;
Wei-Hao Liao, New Taipei, TW;
Hsi-Wen Tien, Hsinchu County, TW;
Cherng-Shiaw Tsai, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes the following operations. A substrate is provided with an electric component. A composite dielectric layer is formed on the substrate and covers the electric component. An opening is formed through the composite dielectric layer. A directional etching process is performed to widen an upper portion of the opening. A metal feature is formed in the opening.