The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Oct. 06, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Hwei-Jay Chu, Hsinchu City, TW;

Hsi-Wen Tien, Hsinchu County, TW;

Wei-Hao Liao, Taichung City, TW;

Yu-Teng Dai, New Taipei City, TW;

Hsin-Chieh Yao, Hsinchu City, TW;

Cheng-Hao Chen, Kaohsiung City, TW;

Chih Wei Lu, Hsinchu City, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/42 (2026.01); H10W 20/033 (2026.01); H10W 20/077 (2026.01); H10W 20/435 (2026.01);
Abstract

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a first conductive line, a first conductive via, a second conductive line, and a first barrier layer. The first conductive line is disposed on the substrate. The first conductive via is disposed on the first conductive line. The second conductive line is disposed on the first conductive line. The first barrier layer is disposed between the first conductive via and the second conductive line.


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