The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Jan. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Hao Liao, Hsinchu, TW;
Hsi-Wen Tien, Hsinchu, TW;
Yu-Teng Dai, Hsinchu, TW;
Chih-Wei Lu, Hsinchu, TW;
Hsin-Chieh Yao, Hsinchu, TW;
Hwei-Jay Chu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes: forming metal lines on a conductive interconnect structure disposed on a substrate; forming functionalized polymers, each of which includes a carbon-based polymer chain and a functional group that is bonded to a lateral surface of a corresponding one of the metal lines and that is represented by formula (A): wherein R1, R2, R3 are defined herein; removing the carbon-based polymer chain of an upper portion of the functionalized polymers to leave the carbon-based polymer chain of remainder of the functionalized polymers and to form recesses; forming a dielectric layer to fill the recesses; and removing the carbon-based polymer chain of the remainder of the functionalized polymers to form air gaps among the metal lines.