The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Jul. 26, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Wei-Hao Liao, Taichung, TW;

Hsi-Wen Tien, Hsinchu County, TW;

Chih Wei Lu, Hsinchu, TW;

Pin-Ren Dai, New Taipei, TW;

Chung-Ju Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02);
Abstract

A memory device includes a bottom electrode, a tunneling junction disposed over the bottom electrode, and a top electrode disposed over the tunneling junction. The top electrode includes a first top electrode layer and a second top electrode layer above the first top electrode layer. The first and second top electrode layers include different material compositions. The first top electrode layer is thinner than the tunneling junction, and the second top electrode layer is thicker than the tunneling junction.


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