IDiyas

For the Inventor, By the Inventor

Grenoble, France

Francois Andrieu

USPTO Granted Patents = 20 

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 17(Granted Patents)


Location History:

  • Saint Ismier, FR (2016 - 2021)
  • Grenoble, FR (2013 - 2023)

Company Filing History:

goldMedal19 out of 3,854 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal7 out of 757 
 
Stmicroelectronics (crolles 2) Sas
 patents
bronzeMedal1 out of 164,108 
 
International Business Machines Corporation
 patents
4. 1 out of 2,426 
 
Stmicroelectronics S.a.
 patents
5. 1 out of 1,013 
 
Commissariat À L'énergie Atomique Et Aux Énergies Alternatives
 patents
where one patent can have more than one assignee

Years Active: 2013-2023

Loading Chart...
20 patents (USPTO):
1. 11810789 - Method of fabricating a semiconductor substrate having a stressed semiconductor region (2023-11-07),
2. 11139209 - 3D circuit provided with mesa isolation for the ground plane zone (2021-10-05),
3. 11024544 - Assembly for 3D circuit with superposed transistor levels (2021-06-01),
4. 11011425 - Production of a 3D circuit with upper level transistor provided with a gate dielectric derived from a substrate transfer (2021-05-18),
5. 10777680 - Integrated circuit chip with strained NMOS and PMOS transistors (2020-09-15),
6. 10741565 - 3D SRAM circuit with double gate transistors with improved layout (2020-08-11),
7. 10651202 - 3D circuit transistors with flipped gate (2020-05-12),
8. 10504897 - Integrated circuit comprising balanced cells at the active (2019-12-10),
9. 10446548 - Integrated circuit including balanced cells limiting an active area (2019-10-15),
10. 10418486 - Integrated circuit chip with strained NMOS and PMOS transistors (2019-09-17),
11. 10263110 - Method of forming strained MOS transistors (2019-04-16),
12. 9985029 - Integrated circuit with NMOS and PMOS transistors having different threshold voltages through channel doping and gate material work function schemes (2018-05-29),
13. 9876032 - Method of manufacturing a device with MOS transistors (2018-01-23),
14. 9558957 - Method for manufacturing a substrate provided with different active areas and with planar and three-dimensional transistors (2017-01-31),
15. 9520330 - Integrated circuit comprising PMOS transistors with different voltage thresholds (2016-12-13),

Title: Francois Andrieu: Pioneering Innovator in Semiconductor Technology

Introduction:

Francois Andrieu, a visionary inventor based in Grenoble, France, is renowned for his relentless pursuit of innovation in the world of technology. With a portfolio boasting 20 patents, Andrieu has made significant contributions to the field of semiconductor technology, inspiring the next generation of inventors and innovators.

Latest Patents:

Among his latest patents is the "Method of fabricating a semiconductor substrate having a stressed semiconductor region," a groundbreaking technique involving the production of a semiconductor substrate with strained semiconductor regions. Additionally, Andrieu's "3D circuit provided with mesa isolation for the ground plane zone" patent showcases his expertise in developing devices with superimposed levels of components, highlighting his ingenuity in semiconductor design.

Career Highlights:

Andrieu's illustrious career includes working at esteemed companies such as the Commissariat a L'energie Atomique Et Aux Energies Alternatives and STMicroelectronics (Crolles 2) SAS. His innovative research and development have significantly advanced the semiconductor industry, earning him a reputation as a trailblazer in the field.

Collaborations:

Throughout his career, Andrieu has collaborated with top professionals in the industry, including Remy Berthelon and Perrine Batude. Their combined expertise and dedication to innovation have led to groundbreaking advancements in semiconductor technology, further solidifying Andrieu's legacy as a pioneering inventor.

Conclusion:

In conclusion, Francois Andrieu's passion for innovation and his commitment to creating a positive impact on society have established him as a true pioneer in the world of technology. His groundbreaking patents and collaborative efforts with industry experts continue to shape the future of semiconductor technology, leaving an indelible mark on the field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…