The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
May. 15, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Francois Andrieu, Grenoble, FR;
Sebastien Barnola, Villard-Bonnot, FR;
Jerome Belledent, Meylan, FR;
Abstract
A substrate is successively provided with a support (), an electrically insulating layer (), and a semi-conductor material layer (). A first protective mask () completely covers a second area (B) of the semi-conductor material layer and leaves a first area (A) of the semi-conductor material layer uncovered. A second etching mask () partially covers the first area (A) and at least partially covers the second area (B), so as to define and separate a first area and a second area. Lateral spacers are formed on the lateral surfaces of the second etching mask () so as to form a third etching mask. The semi-conductor material layer () is etched by means of the third etching mask so as to form a pattern made from semi-conductor material in the first area (A), the first etching mask () protecting the second area (B).