The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Jul. 29, 2019
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Abstract
A method of production of a 3D microelectronic device includes assembling a structure comprising a lower level with a component partially formed in a first semiconductor layer with a support provided with a second semiconductor layer in which a transistor channel of an upper level is capable of being produced, the second semiconductor layer being capped with a dielectric material layer capable of forming a gate dielectric, forming a capping layer arranged on the dielectric material layer, and potentially capable of forming a lower gate portion of the transistor, and defining a gate dielectric zone and an active zone of said transistor by etching the dielectric material layer and the second semiconductor layer, the capping layer protecting said dielectric material layer during this etching.