Perrine Batude

This inventor holds 24 USPTO granted patents and 4 published patent applications and 10 EPO patents. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, STMicroelectronics. Active years: 2011-2024.

USPTO Granted Patents = 24 (Patent Applications = 4)

% Patents Active = 95.8

EPO Patents = 10 (Patent Applications = 13)

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 702(Granted Patents)

Location History:

Dijon, FR (2014 - 2020)
Grenoble, FR (2011 - 2024)

Company Filing History:

24 out of 8,807

Commissariat a L'energie Atomique Et Aux Energies Alternatives

where one patent can have more than one assignee

Years Active: 2011-2024

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24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12154930 - Three-dimensional microelectronic circuit with optimised distribution of its digital and analogue functions (2024-11-26),

2. 11888007 - Image sensor formed in sequential 3D technology (2024-01-30),

3. 11658260 - Method of manufacturing an optoelectronic device comprising a plurality of diodes (2023-05-23),

4. 11552125 - Method of manufacturing an optoelectronic device comprising a plurality of diodes and an electronic circuit for controlling these diodes (2023-01-10),

5. 11139209 - 3D circuit provided with mesa isolation for the ground plane zone (2021-10-05),

6. 11011425 - Production of a 3D circuit with upper level transistor provided with a gate dielectric derived from a substrate transfer (2021-05-18),

7. 10651202 - 3D circuit transistors with flipped gate (2020-05-12),

8. 10586740 - Method for manufacturing pairs of CMOS transistors of the 'fin-FET' type at low temperatures (2020-03-10),

9. 10553702 - Transistor with controlled overlap of access regions (2020-02-04),

10. 10497627 - Method of manufacturing a dopant transistor located vertically on the gate (2019-12-03),

11. 10319628 - Integrated circuit having a plurality of active layers and method of fabricating the same (2019-06-11),

12. 10170621 - Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor (2019-01-01),

13. 9966453 - Method for doping source and drain regions of a transistor by means of selective amorphisation (2018-05-08),

14. 9779982 - Fabrication method of a stack of electronic devices (2017-10-03),

15. 9761607 - Method for producing strained semi-conductor blocks on the insulating layer of a semi-conductor on insulator substrate (2017-09-12),

Title: Perrine Batude - Innovative Inventor from Dijon, FR

Introduction: Perrine Batude is a talented inventor hailing from the picturesque city of Dijon, France. With a passion for creativity and problem-solving, she has made significant contributions to the field of innovation.

Latest Patents: Perrine Batude's latest patents focus on sustainable energy solutions and eco-friendly technologies, showcasing her commitment to environmental conservation and green practices.

Career Highlights: Throughout her career, Perrine has been recognized for her groundbreaking inventions in the renewable energy sector. Her work has revolutionized the way we approach energy production and consumption.

Collaborations: Perrine Batude has collaborated with leading research institutions and universities to further her innovative projects. Her partnerships have led to the development of cutting-edge technologies that have the potential to shape the future of sustainable energy.

Conclusion: Perrine Batude's dedication to innovation and sustainability sets her apart as a visionary inventor. Her contributions to the field continue to inspire and pave the way for a more environmentally conscious future.