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For the Inventor, By the Inventor

Dijon, France

Perrine Batude

USPTO Granted Patents = 24 

 

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 698(Granted Patents)


Location History:

  • Dijon, FR (2014 - 2020)
  • Grenoble, FR (2011 - 2024)

Company Filing History:

goldMedal14 out of 3,854 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal8 out of 1,013 
 
Commissariat À L'énergie Atomique Et Aux Énergies Alternatives
 patents
bronzeMedal4 out of 2,426 
 
Stmicroelectronics S.a.
 patents
4. 2 out of 3,559 
 
Commissariat a L'energie Atomique
 patents
where one patent can have more than one assignee

Years Active: 2011-2024

where 'Filed Patents' based on already Granted Patents

24 patents (USPTO):
1. 12154930 - Three-dimensional microelectronic circuit with optimised distribution of its digital and analogue functions (2024-11-26),
2. 11888007 - Image sensor formed in sequential 3D technology (2024-01-30),
3. 11658260 - Method of manufacturing an optoelectronic device comprising a plurality of diodes (2023-05-23),
4. 11552125 - Method of manufacturing an optoelectronic device comprising a plurality of diodes and an electronic circuit for controlling these diodes (2023-01-10),
5. 11139209 - 3D circuit provided with mesa isolation for the ground plane zone (2021-10-05),
6. 11011425 - Production of a 3D circuit with upper level transistor provided with a gate dielectric derived from a substrate transfer (2021-05-18),
7. 10651202 - 3D circuit transistors with flipped gate (2020-05-12),
8. 10586740 - Method for manufacturing pairs of CMOS transistors of the 'fin-FET' type at low temperatures (2020-03-10),
9. 10553702 - Transistor with controlled overlap of access regions (2020-02-04),
10. 10497627 - Method of manufacturing a dopant transistor located vertically on the gate (2019-12-03),
11. 10319628 - Integrated circuit having a plurality of active layers and method of fabricating the same (2019-06-11),
12. 10170621 - Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor (2019-01-01),
13. 9966453 - Method for doping source and drain regions of a transistor by means of selective amorphisation (2018-05-08),
14. 9779982 - Fabrication method of a stack of electronic devices (2017-10-03),
15. 9761607 - Method for producing strained semi-conductor blocks on the insulating layer of a semi-conductor on insulator substrate (2017-09-12),

Title: Perrine Batude - Innovative Inventor from Dijon, FR

Introduction: Perrine Batude is a talented inventor hailing from the picturesque city of Dijon, France. With a passion for creativity and problem-solving, she has made significant contributions to the field of innovation.

Latest Patents: Perrine Batude's latest patents focus on sustainable energy solutions and eco-friendly technologies, showcasing her commitment to environmental conservation and green practices.

Career Highlights: Throughout her career, Perrine has been recognized for her groundbreaking inventions in the renewable energy sector. Her work has revolutionized the way we approach energy production and consumption.

Collaborations: Perrine Batude has collaborated with leading research institutions and universities to further her innovative projects. Her partnerships have led to the development of cutting-edge technologies that have the potential to shape the future of sustainable energy.

Conclusion: Perrine Batude's dedication to innovation and sustainability sets her apart as a visionary inventor. Her contributions to the field continue to inspire and pave the way for a more environmentally conscious future.

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