The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2018

Filed:

Apr. 06, 2016
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Shay Reboh, Grenoble, FR;

Perrine Batude, Dijon, FR;

Frederic Mazen, Saint Egreve, FR;

Benoit Sklenard, Grenoble, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 21/0257 (2013.01); H01L 21/02532 (2013.01); H01L 21/02667 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 29/0649 (2013.01); H01L 29/41783 (2013.01); H01L 29/66628 (2013.01); H01L 29/66772 (2013.01); H01L 29/78618 (2013.01); H01L 21/26513 (2013.01);
Abstract

Method including the steps consisting in:


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Reboh, Shay. (2018). Method for doping source and drain regions of a transistor by means of selective amorphisation (U.S. Patent No. 9966453). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9966453

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