The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Dec. 18, 2019
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Perrine Batude, Grenoble, FR;
Hubert Bono, Grenoble, FR;
Abstract
A method of manufacturing an optoelectronic device, including the steps of: a) providing an active diode stack comprising a first doped semiconductor layer of a first conductivity type and a second doped semiconductor layer of the first conductivity type, coating the upper surface of the first layer; b) arranging a third semiconductor layer on the upper surface of the active stack; c) after step b), forming at least one MOS transistor inside and on top of the third semiconductor layer; and d) after step b), before or after step c), forming trenches vertically extending from the upper surface of the third layer and emerging into or onto the upper surface of the first layer and delimiting a plurality of pixels, each including a diode and an elementary diode control cell.