The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Dec. 17, 2018
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/822 (2006.01); H01L 21/768 (2006.01); H01L 27/12 (2006.01); H01L 27/06 (2006.01); H01L 21/20 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8221 (2013.01); H01L 21/2007 (2013.01); H01L 21/7688 (2013.01); H01L 21/76801 (2013.01); H01L 21/76879 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/1203 (2013.01); H01L 21/823437 (2013.01); H01L 21/823842 (2013.01);
Abstract
Fabrication of a circuit with superposed transistors includes assembly of a structure having transistors formed from a first semiconducting layer with a support provided with a second semiconducting layer in which transistors are provided on a higher level. The second semiconducting layer is coated with a thin layer of silicon oxide. The assembly of said structure and the support is made by direct bonding in which the thin silicon oxide layer is bonded to oxidised portions of getter material.