The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Apr. 09, 2019
Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Francois Andrieu, Grenoble, FR;

Remy Berthelon, Grenoble, FR;

Bastien Giraud, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/41 (2006.01); H01L 27/11 (2006.01); G11C 11/419 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); G11C 11/419 (2013.01); H01L 21/8221 (2013.01); H01L 27/0688 (2013.01); H01L 27/1203 (2013.01);
Abstract

The application relates to an integrated circuit with SRAM memory and provided with several superimposed levels of transistors, the integrated circuit including SRAM cells provided with a first transistor and a second transistor belonging to an upper level of transistors and each having a double gate composed of an upper electrode and a lower electrode laid out on either side of a semiconductor layer, a lower gate electrode of the first transistor being connected to a lower gate electrode of the second transistor.


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