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Voreppe, France

Bastien Giraud

This inventor holds 24 USPTO granted patents and 11 published patent applications and 15 EPO patents, primarily in Memory Circuit Design. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, STMicroelectronics, Stmicroelectronics (Crolles 2) Sas. Active years: 2010-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bastien Giraud. Retrieved from https://idiyas.com/inventor/bastien-giraud

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 87.5

 

Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 67(Granted Patents)


Location History:

  • Sanary sur Mer, FR (2010 - 2015)
  • Voreppe, FR (2015 - 2021)
  • Grenoble, FR (2013 - 2024)

Company Filing History:

goldMedal22 out of 8,833 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal6 out of 2,426 
 
STMicroelectronics
 patents
bronzeMedal5 out of 781 
 
Stmicroelectronics (Crolles 2) Sas
 patents
4. 1 out of 17 
 
Weebit Nano Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2010-2025

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Areas of Expertise:
SRAM
Resistive Memory
Integrated Circuit
Electroforming Process
Programmable Resistance
FDSOI Technology
Double Gate Transistors
Non-Volatile Memory
Memory Device
Threshold Voltage
Memory Cell
Calculation Operations
24 patents (USPTO):Explore Patents
1. 12362011 - SRAM with reconfigurable setting (2025-07-15),
2. 12119059 - Write method for differential resistive memories (2024-10-15),
3. 12046284 - Electroforming process using an inversion-invariant linear ECC, and associated device (2024-07-23),
4. 11043248 - Circuit for detection of predominant data in a memory cell (2021-06-22),
5. 10910040 - Memory circuit (2021-02-02),
6. 10811087 - Memory circuit capable of implementing calculation operations (2020-10-20),
7. 10803927 - Partitioned memory circuit capable of implementing calculation operations (2020-10-13),
8. 10741565 - 3D SRAM circuit with double gate transistors with improved layout (2020-08-11),
9. 10559355 - Device and method for writing data to a resistive memory (2020-02-11),
10. 10297319 - Memory device with unipolar resistive memory cells with programmable resistive element end control transistor and set/reset operations of thereof (2019-05-21),
11. 9911737 - Integrated circuit comprising transistors with different threshold voltages (2018-03-06),
12. 9542996 - Device with SRAM memory cells including means for polarizing wells of memory cell transistors (2017-01-10),
13. 9508434 - Programmable-resistance non-volatile memory (2016-11-29),
14. 9479168 - Method for controlling an integrated circuit (2016-10-25),
15. 9449688 - Device and method for writing data to a resistive memory (2016-09-20),

Certainly! Here is a draft of the article about inventor Bastien Giraud:

Title: Unveiling the Innovations of Bastien Giraud: A Patent Dynamo from Voreppe, FR

Introduction:

In the realm of technological advancements, certain individuals shine bright with their innovative creations. One such luminary is Bastien Giraud, a prolific inventor hailing from Voreppe, France. With an impressive portfolio of 21 patents to his name, Giraud has made significant contributions to the field of memory circuitry and data detection.

Latest Patents:

Among his latest patents is a groundbreaking invention - the "Circuit for detection of predominant data in a memory cell." This memory device revolutionizes data storage by introducing a novel method of detecting the predominant logical data stored in memory cells, enhancing efficiency and accuracy in read operations. Additionally, Giraud's "Memory circuit" patent showcases his expertise in designing memory circuits with optimized arrangements of elementary cells, paving the way for enhanced performance and reliability.

Career Highlights:

Giraud has garnered invaluable experience through his tenure at renowned companies such as the Commissariat à l'énergie atomique et aux énergies alternatives and STMicroelectronics S.A. His innovative prowess and dedication to advancing technology have been instrumental in shaping the landscape of memory storage systems.

Collaborations:

Throughout his career, Giraud has collaborated with talented individuals such as Jean-Philippe Noël and Olivier Thomas. Together, they have synergized their expertise to bring forth cutting-edge solutions in the field of semiconductor technology, fostering a culture of innovation and excellence.

Conclusion:

In conclusion, Bastien Giraud stands as a beacon of innovation in the realm of memory circuitry and data detection. His patented inventions exemplify his ingenuity and dedication to pushing the boundaries of technological possibilities. As he continues to chart new territories in the world of patents and inventions, Giraud's legacy as a visionary inventor from Voreppe, France, is sure to endure for years to come.

I hope you find this article insightful and engaging! If you need any further information or adjustments, feel free to let me know.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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