The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Oct. 11, 2013
Stmicroelectronics SA, Mountrouge, FR;
Commissariat Àl'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Bastien Giraud, Grenoble, FR;
Philippe Flatresse, Lapierre, FR;
Jean-Philippe Noel, Montbonnot Saint Martin, FR;
Bertrand Pelloux-Prayer, Crolles, FR;
STMicroelectronics SA, Montrouge, FR;
Abstract
An integrated circuit includes a substrate with first and second cells having first and second FDSOI field-effect transistors. There are first and second ground planes, a buried oxide layer and first and second wells, under the ground planes. The first well and the first ground plane have the same doping and the second well and the second ground plane have the same doping. The first and second cells are adjoined and their transistors are aligned in a first direction. The wells of the first cell and the first well of the second cell are doped opposite of the second well. A control device applies a first electrical bias to the wells with the first doping and a second electrical bias to the well with the second doping. The transistors of the first cell and second cell have different threshold voltage levels.