The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jul. 23, 2015
Applicant:
Commissariat À I'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Thomas-Medhi Benoist, Grenoble, FR;
Haithem Ayari, Marseilles, FR;
Bastien Giraud, Voreppe, FR;
Adam Makosiej, Grenoble, FR;
Yves Maneglia, Fontaine, FR;
Santhosh Onkaraiah, Marseilles, FR;
Jean-Michel Portal, Saint-Savournin, FR;
Olivier Thomas, Revel, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0009 (2013.01); G11C 2213/74 (2013.01); G11C 2213/79 (2013.01);
Abstract
A non-volatile memory including a plurality of elementary cells, each cell including: a first programmable-resistance storage element connected between first and second nodes of the cell; a first access transistor coupling the second node to a third node of the cell; and a second access transistor coupling the second node to a fourth node of the cell.