IDiyas

For the Inventor, By the Inventor

Grenoble, France

Adam Makosiej

USPTO Granted Patents = 14 

 

Average Co-Inventor Count = 2.5

ph-index = 3

Forward Citations = 27(Granted Patents)


Location History:

  • Paris, FR (2015)
  • Grenoble, FR (2016 - 2021)

Company Filing History:

goldMedal8 out of 3,854 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal6 out of 1,013 
 
Commissariat À L'énergie Atomique Et Aux Énergies Alternatives
 patents

Years Active: 2015-2021

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14 patents (USPTO):Explore Patents
1. 10923191 - 3D SRAM/ROM with several superimposed layers and reconfigurable by transistor rear biasing (2021-02-16),
2. 10910040 - Memory circuit (2021-02-02),
3. 10861520 - SRAM/ROM memory reconfigurable by supply connections (2020-12-08),
4. 10839906 - In memory computing (IMC) memory circuit having 6T cells (2020-11-17),
5. 10748604 - SRAM memory with improved end-of-read triggering (2020-08-18),
6. 10685700 - PVT detection circuit (2020-06-16),
7. 10110203 - Tri-state inverter, D latch and master-slave flip-flop comprising TFETs (2018-10-23),
8. 10079056 - SRAM memory bit cell comprising n-TFET and p-TFET (2018-09-18),
9. 9685222 - Memory cell with read transistors of the TFET and MOSFET type to reduce leakage current (2017-06-20),
10. 9679649 - Reconfigurable cam (2017-06-13),
11. 9542996 - Device with SRAM memory cells including means for polarizing wells of memory cell transistors (2017-01-10),
12. 9508434 - Programmable-resistance non-volatile memory (2016-11-29),
13. 9252269 - Tunnel effect transistor (2016-02-02),
14. 9099993 - Circuit for reverse biasing inverters for reducing the power consumption of an SRAM memory (2015-08-04),

Title: The Innovative Mind of Adam Makosiej

Introduction

Adam Makosiej is a prominent inventor based in Grenoble, France. He has made significant contributions to the field of microelectronics, holding a total of 14 patents. His work focuses on advanced memory technologies, showcasing his expertise and innovative spirit.

Latest Patents

Among his latest patents is a groundbreaking 3D SRAM/ROM device that features several superimposed layers. This microelectronic device includes memory cells with a SRAM structure, equipped with a rear biasing electrode. The unique aspect of this invention is the ability to modify the biasing of the rear electrode, allowing the memory cells to switch between ROM and SRAM operating modes. Another notable patent is a memory circuit that consists of multiple elementary cells arranged in arrays. Each cell shares conductive tracks, enhancing the efficiency and functionality of the memory circuit.

Career Highlights

Adam has worked with esteemed organizations such as the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His experience in these institutions has allowed him to develop and refine his innovative ideas, contributing to advancements in the field of microelectronics.

Collaborations

Throughout his career, Adam has collaborated with talented individuals, including Costin Anghel and Olivier Thomas. These partnerships have fostered a creative environment that has led to the development of cutting-edge technologies.

Conclusion

Adam Makosiej's contributions to microelectronics and memory technology are noteworthy. His innovative patents and collaborations reflect his dedication to advancing the field. His work continues to inspire future innovations in technology.

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