The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Jul. 12, 2019
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
David Coriat, Grenoble, FR;
Adam Makosiej, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/412 (2006.01); G11C 14/00 (2006.01); G11C 11/417 (2006.01); G11C 11/418 (2006.01); G11C 17/08 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/06 (2006.01); H01L 27/11 (2006.01); H01L 27/112 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0054 (2013.01); G11C 11/412 (2013.01); G11C 11/417 (2013.01); G11C 11/418 (2013.01); G11C 17/08 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/0688 (2013.01); H01L 27/1104 (2013.01); H01L 27/11213 (2013.01);
Abstract
A 3D microelectronic device is provided with several superimposed layers of components, with an upper layer including one or several memory cells having a SRAM structure and provided with a rear biasing electrode. The biasing of the rear biasing electrode is modified to switch the memory cells from a ROM operating mode to a SRAM operating mode.
Coriat, David. (2021). 3d sram/rom with several superimposed layers and reconfigurable by transistor rear biasing (U.S. Patent No. 10923191). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10923191
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile