The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Sep. 10, 2015
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Olivier Thomas, Revel, FR;

Bastien Giraud, Voreppe, FR;

Adam Makosiej, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 11/419 (2006.01); H01L 21/84 (2006.01); H01L 29/786 (2006.01); H01L 27/11 (2006.01); H01L 27/12 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 7/06 (2013.01); G11C 29/44 (2013.01); H01L 21/84 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01); H01L 27/1203 (2013.01); H01L 29/786 (2013.01);
Abstract

A memory device includes a matrix of several columns of SRAM memory cells each including transistors forming a memory point, a read port and a write port, and such that the transistors of the read port and/or the P-type transistors include a second well with a conductivity type opposite that of a first well of the other transistors. The memory device also includes a polarization unit for the second wells, able to select and apply polarization potentials on the second wells, including a memory circuit of the polarization states of the second wells for each column or group of columns and a selection circuit applying a polarization potential on the second wells according to one of the values received as input, as a function of the stored polarization state associated with the column or group of columns.


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