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Hod Hasharon, Israel

Weebit Nano Ltd.

USPTO Granted Patents = 17

EPO Patents = 9

Forward Citations = 3

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18 inventors (with patents filed for the assignee):

Gabriel Molas (9 out of 29 patents)

Amir Regev (8 out of 8 patents)

Lior Dagan (7 out of 7 patents)

4. Guiseppe Piccolboni (6 out of 6 patents)

5. Alessandro Bricalli (4 out of 4 patents)

6. Jean-François Nodin (4 out of 9 patents)

7. Anthonin Verdy (3 out of 7 patents)

8. Paola Trotti (2 out of 3 patents)

9. Ilan Sever (2 out of 2 patents)

10. Gaël Castellan (2 out of 2 patents)

11. Gaël Pillonnet (1 out of 26 patents)

12. Valentin Gherman (1 out of 12 patents)

13. Bastien Giraud (1 out of 24 patents)

14. Thomas Magis (1 out of 3 patents)

15. Sebastien Ricavy (1 out of 1 patent)

17 patents: Sort by Forward Citations

1. 12414485 - Method for manufacturing an OxRAM-type resistive memory cell and associated OxRAM-type memory cell (2025-09-09),

2. 12406724 - Resistive memory with selector, equipped with a write capacitor, and associated writing method (2025-09-02),

3. 12349609 - Low forming voltage OxRAM memory cell, and associated method of manufacture (2025-07-01),

4. 12349605 - Method for manufacturing an OxRAM type resistive memory cell (2025-07-01),

5. 12347487 - Current and voltage limit circuitry for resistive random access memory programming (2025-07-01),

6. 12224007 - Method for determining a manufacturing parameter of a resistive random access memory cell (2025-02-11),

7. 12170110 - Silicon-on-insulator (SOI) circuitry for low-voltage memory bit-line and word-line decoders (2024-12-17),

8. 12165706 - Method for resetting an array of resistive memory cells (2024-12-10),

9. 12131777 - Resistive random-access memory (ReRAM) cell optimized for reset and set currents (2024-10-29),

10. 12119059 - Write method for differential resistive memories (2024-10-15),

11. 12087360 - Method for programming an array of resistive memory cells (2024-09-10),

12. 12068028 - Circuitry for parallel set and reset of resistive random-access memory (ReRAM) cells (2024-08-20),

13. 12052876 - Memory comprising a matrix of resistive memory cells, and associated method of interfacing (2024-07-30),

14. 12040017 - Current and voltage limit circuitry for resistive random access memory programming (2024-07-16),

15. 12033698 - Method for resetting an array of resistive memory cells (2024-07-09),

Weebit Nano Ltd. is a semiconductor company based in Hod Hasharon, Israel, specializing in the development of next-generation memory technologies. The company focuses on resistive RAM (ReRAM) solutions, which are designed to enhance performance and efficiency in various applications, including IoT devices, automotive systems, and advanced computing. Weebit Nano's innovative approach aims to address the growing demand for faster, more reliable memory solutions in an increasingly connected world.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

17 Patents

#15 in Hod Hasharon

#374 in Israel

#35,887 in the World

Hod Hasharon, Israel

Weebit Nano Ltd.

Forward Citations = 3

18 inventors:

Gabriel Molas (9 out of 29 patents)

Amir Regev (8 out of 8 patents)

Lior Dagan (7 out of 7 patents)

4. Guiseppe Piccolboni (6 out of 6 patents)

5. Alessandro Bricalli (4 out of 4 patents)

Please report any incorrect information to [email protected]

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