The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jun. 03, 2022
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Weebit Nano Ltd, Hod-Hasharon, IL;
Gabriel Molas, Grenoble, FR;
Alessandro Bricalli, Grenoble, FR;
Guiseppe Piccolboni, Verona, IT;
Amir Regev, Modiin, IL;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
WEEBIT NANO LTD, Hod-Hasharon, IL;
Abstract
A method for programming at least one resistive memory cell of an array of resistive memory cells, includes a sequence of N programming cycles, N being an integer greater than or equal to 2, each programming cycle including a set procedure and a reset procedure, each set procedure including the application of a set technique chosen among a plurality of set techniques, the method including acquiring a bit error ratio value corresponding to each programming cycle for each set technique; and at each programming cycle, applying the set technique having the lowest bit error ratio value corresponding to the programming cycle.