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For the Inventor, By the Inventor

Palaiseau, France

Valentin Gherman

USPTO Granted Patents = 11 

 

Average Co-Inventor Count = 1.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Massy, FR (2013)
  • Palaiseau, FR (2015 - 2021)
  • Grenoble, FR (2022 - 2024)

Company Filing History:

goldMedal11 out of 3,854 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal1 out of 17 
 
Weebit Nano Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2013-2024

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11 patents (USPTO):Explore Patents
1. 12154647 - Method and device for correcting errors in resistive memories (2024-11-26),
2. 12119059 - Write method for differential resistive memories (2024-10-15),
3. 12046284 - Electroforming process using an inversion-invariant linear ECC, and associated device (2024-07-23),
4. 11374595 - Method for selectively inverting words to be written to a memory and device for implementing same (2022-06-28),
5. 10990477 - Device and method for controlling the data refresh cycles in reprogrammable non-volatile memories (2021-04-27),
6. 10650879 - Device and method for controlling refresh cycles of non-volatile memories (2020-05-12),
7. 9520899 - Method for generating a maximized linear correcting code, method and device for decoding such a code (2016-12-13),
8. 9515682 - Device for correcting two errors with a code of hamming distance three or four (2016-12-06),
9. 9347986 - Method and device for controlling the latency of electronic circuits (2016-05-24),
10. 9015528 - Method for the on-line testing of pipeline stages temporarily not in use, and associated device (2015-04-21),
11. 8566679 - Error-correcting encoding method with total parity bits, and method for detecting multiple errors (2013-10-22),

Title: Innovations of Inventor Valentin Gherman

Introduction

Valentin Gherman is a notable inventor based in Palaiseau, France. He has made significant contributions to the field of resistive memories, holding a total of 11 patents. His work focuses on improving the efficiency and reliability of memory systems, which are crucial in modern electronics.

Latest Patents

One of his latest patents is titled "Method and device for correcting errors in resistive memories." This innovation provides a solution for enhancing error correction in 2T2R resistive memory systems protected by an error correction code. The method allows for the identification of bits that may be incorrect, referred to as 'erasures,' and enables the inversion of these bits to generate a corrected codeword.

Another significant patent is "Method for differential resistive memories." This method outlines a process for writing a data word to a resistive memory composed of 2T2R differential cells. It includes steps such as generating an initial codeword, programming it in 1T1R mode, and verifying its accuracy. The method ensures that the read data corresponds to the initial data, thereby enhancing the reliability of the memory system.

Career Highlights

Valentin Gherman has worked with prominent organizations, including the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and Weebit Nano Ltd. His experience in these companies has allowed him to develop and refine his innovative ideas in the field of memory technology.

Collaborations

Throughout his career, Gherman has collaborated with talented individuals such as Samuel Evain and Bastien Giraud. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Valentin Gherman is a distinguished inventor whose work in resistive memories has led to significant advancements in the field. His innovative patents and collaborations highlight his commitment to improving memory technology.

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