The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jun. 11, 2020
Commissariat À L'energie Atomique ET Aux Énergies Alternatives, Paris, FR;
Weebit Nano Ltd, Hod-Hasharon, IL;
Gabriel Molas, Grenoble, FR;
Guiseppe Piccolboni, Verona, IT;
Amir Regev, Modiin, IL;
Gaël Castellan, Grenoble, FR;
Jean-François Nodin, Grenoble, FR;
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris, FR;
WEEBIT NANO LTD, Hod-Hasharon, IL;
Abstract
A method for manufacturing an OxRAM type resistive memory cell including a silicon oxide layer, the method including determining manufacturing parameter values enabling the resistive memory cell to have an initial resistance between 10Ω and 3·10Ω; and forming on a substrate a stack successively including a first electrode, the silicon oxide layer and a second electrode, by applying the manufacturing parameter values.