The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Nov. 17, 2020
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Weebit Nano Ltd, Hod-HaSharon, IL;
Gabriel Molas, Grenoble, FR;
Thomas Magis, Grenoble, FR;
Jean-François Nodin, Grenoble, FR;
Alessandro Bricalli, Grenoble, FR;
Guiseppe Piccolboni, Verona, IT;
Yifat Cohen, Kiryat Tivon, IL;
Amir Regev, Modiin, IL;
COMMISSARIAT A L'ENERGIE ATOMIZUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
WEEBIT NANO LTD, Hod-HaSharon, IL;
Abstract
An OxRAM resistive memory cell includes a lower electrode, an upper electrode, and an active layer which extends between the lower electrode and the upper electrode. The active layer includes a layer of a first electrically insulating oxide, wherein an electrically conductive filament can be formed, then subsequently broken and reformed several times successively. The upper electrode includes a reservoir layer, capable of receiving oxygen, which includes an upper part made of a metal and a lower part made of a second oxide, the second oxide being an oxide of the metal and including a proportion of oxygen such that the second oxide is electrically conductive.