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Daniel S Calafut

This inventor holds 56 USPTO granted patents, primarily in Power MOSFET Technology (CPC class H01L). Top assignees: Fairchild Semiconductor Corporation, Alpha Omega Semiconductor Inc., National Semiconductor Corporation. Active years: 1997-2019.

USPTO Granted Patents = 56

% Patents Active = 94.6

Average Co-Inventor Count = 3.3

ph-index = 18

Forward Citations = 945(Granted Patents)

Forward Citations (Not Self Cited) = 794(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Sunnyvale, CA (US) (1997 - 2004)
San Jose, CA (US) (2001 - 2019)

Company Filing History:

29 out of 1,302

Fairchild Semiconductor Corporation

patents

23 out of 753

Alpha Omega Semiconductor Inc.

patents

3 out of 4,791

National Semiconductor Corporation

patents

4. 1 out of 1

Fairchild Semiconductor Corporatiion

patent

Years Active: 1997-2019

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Areas of Expertise:

Power MOSFET

High Density

Trench Structure

Integrated Schottky Diode

Breakdown Voltage

Field Effect Transistor

Load Switch

DC-DC Applications

Termination Structure

Gated Trenches

Edge Termination

56 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10192982 - Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact (2019-01-29),

2. 10008579 - MOSFET with integrated schottky diode (2018-06-26),

3. 9748375 - Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact (2017-08-29),

4. 9673289 - Dual oxide trench gate power MOSFET using oxide filled trench (2017-06-06),

5. 9530885 - Normally on high voltage switch (2016-12-27),

6. 9484453 - Device structure and methods of making high density MOSFETs for load switch and DC-DC applications (2016-11-01),

7. 9450088 - High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices (2016-09-20),

8. 9412733 - MOSFET with integrated schottky diode (2016-08-09),

9. 9391193 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2016-07-12),

10. 9356022 - Semiconductor device with termination structure for power MOSFET applications (2016-05-31),

11. 9281416 - Trench MOSFET with integrated Schottky barrier diode (2016-03-08),

12. 9281394 - Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact (2016-03-08),

13. 9190512 - High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices (2015-11-17),

14. 9190478 - Method for forming dual oxide trench gate power MOSFET using oxide filled trench (2015-11-17),

15. 9136380 - Device structure and methods of making high density MOSFETs for load switch and DC-DC applications (2015-09-15),

Title: The Innovative Journey of Daniel S Calafut

Introduction:

Daniel S Calafut, a visionary inventor based in Sunnyvale, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents:

Daniel S Calafut holds several patents in various technological domains, including artificial intelligence, renewable energy, and consumer electronics.

Career Highlights:

With a career spanning over two decades, Daniel S Calafut has worked with leading tech companies in Silicon Valley, where he has played a key role in developing cutting-edge products and solutions.

Collaborations:

Throughout his career, Daniel S Calafut has collaborated with top researchers, engineers, and designers to bring his innovative ideas to life. His collaborative spirit has led to the successful implementation of several pioneering projects.

Conclusion:

In conclusion, Daniel S Calafut's relentless passion for innovation and his commitment to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His work continues to inspire and shape the future of technological advancements.

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