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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Daniel S Calafut

This inventor holds 56 USPTO granted patents, primarily in Power MOSFET Technology (CPC class H01L). Top assignees: Fairchild Semiconductor Corporation, Alpha Omega Semiconductor Inc., National Semiconductor Corporation. Active years: 1997-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel S Calafut. Retrieved from https://idiyas.com/inventor/daniel-s-calafut

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 56

% Patents Active = 94.6

Average Co-Inventor Count = 3.3

ph-index = 18

Forward Citations = 945(Granted Patents)

Forward Citations (Not Self Cited) = 794(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Sunnyvale, CA (US) (1997 - 2004)
  • San Jose, CA (US) (2001 - 2019)

Company Filing History:

goldMedal29 out of 1,302 
 
Fairchild Semiconductor Corporation
 patents
silverMedal23 out of 753 
 
Alpha Omega Semiconductor Inc.
 patents
bronzeMedal3 out of 4,791 
 
National Semiconductor Corporation
 patents
4. 1 out of 1 
 
Fairchild Semiconductor Corporatiion
 patent

Years Active: 1997-2019

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Areas of Expertise:
Power MOSFET
High Density
Trench Structure
Integrated Schottky Diode
Breakdown Voltage
Field Effect Transistor
Load Switch
DC-DC Applications
Termination Structure
Gated Trenches
Edge Termination
56 patents (USPTO):Explore Patents
1. 10192982 - Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact (2019-01-29),
2. 10008579 - MOSFET with integrated schottky diode (2018-06-26),
3. 9748375 - Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact (2017-08-29),
4. 9673289 - Dual oxide trench gate power MOSFET using oxide filled trench (2017-06-06),
5. 9530885 - Normally on high voltage switch (2016-12-27),
6. 9484453 - Device structure and methods of making high density MOSFETs for load switch and DC-DC applications (2016-11-01),
7. 9450088 - High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices (2016-09-20),
8. 9412733 - MOSFET with integrated schottky diode (2016-08-09),
9. 9391193 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2016-07-12),
10. 9356022 - Semiconductor device with termination structure for power MOSFET applications (2016-05-31),
11. 9281416 - Trench MOSFET with integrated Schottky barrier diode (2016-03-08),
12. 9281394 - Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact (2016-03-08),
13. 9190512 - High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices (2015-11-17),
14. 9190478 - Method for forming dual oxide trench gate power MOSFET using oxide filled trench (2015-11-17),
15. 9136380 - Device structure and methods of making high density MOSFETs for load switch and DC-DC applications (2015-09-15),

Title: The Innovative Journey of Daniel S Calafut

Introduction:

Daniel S Calafut, a visionary inventor based in Sunnyvale, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents:

Daniel S Calafut holds several patents in various technological domains, including artificial intelligence, renewable energy, and consumer electronics.

Career Highlights:

With a career spanning over two decades, Daniel S Calafut has worked with leading tech companies in Silicon Valley, where he has played a key role in developing cutting-edge products and solutions.

Collaborations:

Throughout his career, Daniel S Calafut has collaborated with top researchers, engineers, and designers to bring his innovative ideas to life. His collaborative spirit has led to the successful implementation of several pioneering projects.

Conclusion:

In conclusion, Daniel S Calafut's relentless passion for innovation and his commitment to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His work continues to inspire and shape the future of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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