Average Co-Inventor Count = 3.3

ph-index = 18

Forward Citations = 940(Granted Patents)

Forward Citations (Not Self Cited) = 794(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Sunnyvale, CA (US) (1997 - 2004)
San Jose, CA (US) (2001 - 2019)

Company Filing History:

29 out of 1,302

Fairchild Semiconductor Corporation

patents

23 out of 752

Alpha Omega Semiconductor Inc.

patents

3 out of 4,791

National Semiconductor Corporation

patents

4. 1 out of 1

Fairchild Semiconductor Corporatiion

patent

Years Active: 1997-2019

Loading Chart...

Areas of Expertise:

Nano MOSFET

Trench MOSFET

Integrated Schottky Diode

High Density MOSFETs

Power Semiconductor Devices

Trench-Gate Field Effect Transistor

Edge Termination

Voltage Switch

Self-Aligned Active Contacts

Breakdown Voltage Characteristics

Load Switch Applications

Electrostatic Discharge Circuit

56 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10192982 - Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact (2019-01-29),

2. 10008579 - MOSFET with integrated schottky diode (2018-06-26),

3. 9748375 - Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact (2017-08-29),

4. 9673289 - Dual oxide trench gate power MOSFET using oxide filled trench (2017-06-06),

5. 9530885 - Normally on high voltage switch (2016-12-27),

6. 9484453 - Device structure and methods of making high density MOSFETs for load switch and DC-DC applications (2016-11-01),

7. 9450088 - High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices (2016-09-20),

8. 9412733 - MOSFET with integrated schottky diode (2016-08-09),

9. 9391193 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2016-07-12),

10. 9356022 - Semiconductor device with termination structure for power MOSFET applications (2016-05-31),

11. 9281416 - Trench MOSFET with integrated Schottky barrier diode (2016-03-08),

12. 9281394 - Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact (2016-03-08),

13. 9190512 - High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices (2015-11-17),

14. 9190478 - Method for forming dual oxide trench gate power MOSFET using oxide filled trench (2015-11-17),

15. 9136380 - Device structure and methods of making high density MOSFETs for load switch and DC-DC applications (2015-09-15),

Title: The Innovative Journey of Daniel S Calafut

Introduction:

Daniel S Calafut, a visionary inventor based in Sunnyvale, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents:

Daniel S Calafut holds several patents in various technological domains, including artificial intelligence, renewable energy, and consumer electronics.

Career Highlights:

With a career spanning over two decades, Daniel S Calafut has worked with leading tech companies in Silicon Valley, where he has played a key role in developing cutting-edge products and solutions.

Collaborations:

Throughout his career, Daniel S Calafut has collaborated with top researchers, engineers, and designers to bring his innovative ideas to life. His collaborative spirit has led to the successful implementation of several pioneering projects.

Conclusion:

In conclusion, Daniel S Calafut's relentless passion for innovation and his commitment to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His work continues to inspire and shape the future of technological advancements.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com