The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Mar. 04, 2016
Alpha and Omega Semiconductor Incorporated;
Hamza Yilmaz, Saratoga, CA (US);
Daniel Ng, Campbell, CA (US);
Daniel Calafut, San Jose, CA (US);
Madhur Bobde, San Jose, CA (US);
Anup Bhalla, Princeton Junction, NJ (US);
Ji Pan, San Jose, CA (US);
Yeeheng Lee, San Jose, CA (US);
Jongoh Kim, Suwon, KR;
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Abstract
A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device may include a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each of the trenches has a depth in a first dimension, a width in a second dimension and a length in a third dimension. The body region is of opposite conductivity type to the lightly and heavily doped layers. The source region is formed proximate the upper surface. One or more deep contacts are formed at one or more locations along the third dimension proximate one or more of the trenches. The contacts extend in the first direction from the upper surface into the lightly doped layer and are in electrical contact with the source region.