The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Jul. 11, 2014
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Madhur Bobde, Sunnyvale, CA (US);
Hong Chang, Saratoga, CA (US);
Yeeheng Lee, San Jose, CA (US);
Daniel Calafut, San Jose, CA (US);
Jongoh Kim, Portland, OR (US);
Sik Lui, Sunnyvale, CA (US);
John Chen, Palo Alto, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
Aspects of the present disclosure describe a high density trench-based power MOSFETs with self-aligned source contacts and methods for making such devices. The source contacts are self-aligned with spacers that are formed along the sidewall of the gate caps. Additionally, the active devices may have a two-step gate oxide. A lower portion may have a thickness that is larger than the thickness of an upper portion of the gate oxide. The two-step gate oxide combined with the self-aligned source contacts allow for the production of devices with a pitch in the deep sub-micron level. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.