The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Aug. 18, 2017
Alpha and Omega Semiconductor Incorporated;
Hamza Yilmaz, Saratoga, CA (US);
Daniel Ng, Campbell, CA (US);
Daniel Calafut, San Jose, CA (US);
Madhur Bobde, San Jose, CA (US);
Anup Bhalla, Princeton Junction, NJ (US);
Ji Pan, San Jose, CA (US);
Yeeheng Lee, San Jose, CA (US);
Jongoh Kim, Suwon, KR;
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Abstract
A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. Each device includes a body region, a source region, and one or more gate electrodes formed in corresponding trenches in the lightly doped region. Each trench has a first dimension (depth), a a second dimension (width) and a third dimension (length). The body region is of opposite conductivity type to the lightly and heavily doped layers. An opening is formed between first and second trenches through an upper portion of the source region and a body contact region to the body region. A deep implant region of the second conductivity type is formed in the lightly doped layer below the body region. The deep implant region is vertically aligned to the opening and spaced away from a bottom of the opening.