The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Jun. 25, 2013
Applicant:

Alpha & Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventors:

Daniel Calafut, San Jose, CA (US);

Yeeheng Lee, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 29/1095 (2013.01); H01L 29/66143 (2013.01); H01L 29/7811 (2013.01); H01L 29/7827 (2013.01); H01L 29/872 (2013.01);
Abstract

Aspects of the present disclosure describe a Schottky structure with two trenches formed in a semiconductor material. The trenches are spaced apart from each other by a mesa. Each trench may have first and second conductive portions lining the first and second sidewalls. The first and second portions of conductive material are electrically isolated from each other in each trench. The Schottky contact may be formed at any location between the outermost conductive portions. The Schottky structure may be formed in the active area or the termination area of a device die. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.


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