The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Nov. 10, 2015
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Yeeheng Lee, San Jose, CA (US);
Hong Chang, Saratoga, CA (US);
Jongoh Kim, Portland, OR (US);
Sik Lui, Sunnyvale, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Madhur Bobde, Sunnyvale, CA (US);
Daniel Calafut, San Jose, CA (US);
John Chen, Palo Alto, CA (US);
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Abstract
Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with a first insulative spacer and a second insulative spacer, wherein the first spacer is resistant to an etching process that will selectively remove the material the second spacer is made from. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.