The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jun. 10, 2015
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Madhur Bobde, Santa Clara, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Karthik Padmanabhan, San Jose, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
In some embodiments, a normally on high voltage switch device ('normally on switch device') incorporates a trench gate terminal and buried doped gate region. In other embodiments, a surface gate controlled normally on high voltage switch device is formed with trench structures and incorporates a surface channel controlled by a surface gate electrode. The surface gate controlled normally on switch device may further incorporate a trench gate electrode and a buried doped gate region to deplete the conducting channel to aid in the turning off of the normally on switch device. The normally on switch devices thus constructed can be readily integrated with MOSFET devices and formed using existing high voltage MOSFET fabrication technologies.