The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2016
Filed:
Sep. 03, 2015
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Madhur Bobde, San Jose, CA (US);
Hong Chang, Cupertino, CA (US);
Yeeheng Lee, San Jose, CA (US);
Daniel Calafut, San Jose, CA (US);
Jongoh Kim, Suwon, KR;
Sik Lui, Sunnyvale, CA (US);
John Chen, Palo Alto, CA (US);
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Abstract
Aspects of the present disclosure describe a high density trench-based power. The active devices may have a two-step gate oxide. A lower portion may have a thickness that is larger than the thickness of an upper portion of the gate oxide. A lightly doped sub-body layer may be formed below a body region between two or more adjacent active device structures of the plurality. The sub-body layer extends from a depth of the upper portion of the gate oxide to a depth of the lower portion of the gate oxide It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.