The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Jul. 23, 2015
Applicant:

Alpha and Omega Semiconductor Incorporated;

Inventors:

Yeeheng Lee, San Jose, CA (US);

Madhur Bobde, San Jose, CA (US);

Daniel Calafut, San Jose, CA (US);

Hamza Yilmaz, Saratoga, CA (US);

Xiaobin Wang, San Jose, CA (US);

Ji Pan, San Jose, CA (US);

Hong Chang, Cupertino, CA (US);

Jongoh Kim, Suwon, KR;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/82 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/308 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/308 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 27/0251 (2013.01); H01L 29/0619 (2013.01); H01L 29/407 (2013.01); H01L 29/66712 (2013.01); H01L 29/66719 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7806 (2013.01); H01L 29/7808 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/0623 (2013.01); H01L 29/41766 (2013.01); H01L 29/42368 (2013.01);
Abstract

A semiconductor device may have an active device region containing a plurality of active devices and a termination structure that surrounds the active device region. The termination structure includes a first conductive region that surrounds the active device region, an insulator region that surrounds the first conductive region, and a second conductive region that surrounds the first conductive region and the insulator region. The active device region and termination structure are formed into a semiconductor material of a first conductivity type. The first conductive region is electrically connected to a gate metal and the second conductive region is connected to a drain metal.


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