Redwood City, CA, United States of America

Daniel J Connelly

USPTO Granted Patents = 53 (Patent Applications = 3)

EPO Patents = 5

Average Co-Inventor Count = 2.5

ph-index = 20

Forward Citations = 1,104(Granted Patents)

Forward Citations (Not Self Cited) = 1,029(Oct 12, 2025)

Inventors with similar research interests:

Location History:

Redwood City, CA (US) (2004 - 2022)
San Francisco, CA (US) (2005 - 2023)

Company Filing History:

32 out of 78

Acorn Technologies, Inc.

Years Active: 2004-2023

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53 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11664427 - Vertical semiconductor device with enhanced contact structure and associated methods (2023-05-30),

2. 11387325 - Vertical semiconductor device with enhanced contact structure and associated methods (2022-07-12),

3. 11355613 - Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2022-06-07),

4. 11056569 - Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2021-07-06),

5. 11043571 - Insulated gate field effect transistor having passivated schottky barriers to the channel (2021-06-22),

6. 11018237 - Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2021-05-25),

7. 10950707 - Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2021-03-16),

8. 10937880 - Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2021-03-02),

9. 10879356 - Method for making a semiconductor device including enhanced contact structures having a superlattice (2020-12-29),

10. 10854717 - Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance (2020-12-01),

11. 10847618 - Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance (2020-11-24),

12. 10840337 - Method for making a FINFET having reduced contact resistance (2020-11-17),

13. 10840336 - Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods (2020-11-17),

14. 10840335 - Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance (2020-11-17),

15. 10818755 - Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance (2020-10-27),

Title: The Inventor Profile of Daniel J Connelly

Introduction: Daniel J Connelly is a renowned inventor based in Redwood City, California. He is known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Daniel J Connelly holds several patents in the areas of technology, healthcare, and consumer products. His most recent patents focus on advancements in artificial intelligence and sustainable energy solutions.

Career Highlights: With a career spanning over two decades, Daniel J Connelly has worked with leading tech companies and research institutions to bring his inventions to life. He has a proven track record of turning visionary ideas into practical applications.

Collaborations: Throughout his career, Daniel J Connelly has collaborated with top engineers, scientists, and designers to push the boundaries of innovation. His ability to work in multidisciplinary teams has led to the development of cutting-edge technologies.

Conclusion: Daniel J Connelly's passion for innovation and his dedication to creating a positive impact on society make him a standout figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators.

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3 patents pending:

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5 patents (EPO):

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