logo

For the Inventor, By the Inventor

Redwood City, CA, United States of America

Daniel J Connelly

This inventor holds 53 USPTO granted patents and 3 published patent applications and 9 EPO patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Acorn Technologies, Inc., Atomera Incorporated, Acorn Semi, LLC. Active years: 2004-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel J Connelly. Retrieved from https://idiyas.com/inventor/daniel-j-connelly

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 53 

% Patents Active = 66.0

 

Average Co-Inventor Count = 2.5

ph-index = 21

Forward Citations = 1,163(Granted Patents)

Forward Citations (Not Self Cited) = 1,029(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Redwood City, CA (US) (2004 - 2022)
  • San Francisco, CA (US) (2005 - 2023)

Company Filing History:

goldMedal32 out of 78 
 
Acorn Technologies, Inc.
 patents
silverMedal13 out of 114 
 
Atomera Incorporated
 patents
bronzeMedal6 out of 31 
 
Acorn Semi, LLC
 patents
4. 2 out of 2,611 
 
Synopsys, Inc.
 patents

Years Active: 2004-2023

Loading Chart...
Loading Chart...
Areas of Expertise:
Semiconductor Devices
Fermi Level Depinning
FINFET
Contact Resistance
Superlattice
Insulated Gate Transistor
Dopant Diffusion
Channel Strain
Ballistic Mobility
Electrical Junctions
53 patents (USPTO):Explore Patents
1. 11664427 - Vertical semiconductor device with enhanced contact structure and associated methods (2023-05-30),
2. 11387325 - Vertical semiconductor device with enhanced contact structure and associated methods (2022-07-12),
3. 11355613 - Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2022-06-07),
4. 11056569 - Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2021-07-06),
5. 11043571 - Insulated gate field effect transistor having passivated schottky barriers to the channel (2021-06-22),
6. 11018237 - Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2021-05-25),
7. 10950707 - Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2021-03-16),
8. 10937880 - Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions (2021-03-02),
9. 10879356 - Method for making a semiconductor device including enhanced contact structures having a superlattice (2020-12-29),
10. 10854717 - Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance (2020-12-01),
11. 10847618 - Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance (2020-11-24),
12. 10840337 - Method for making a FINFET having reduced contact resistance (2020-11-17),
13. 10840336 - Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods (2020-11-17),
14. 10840335 - Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance (2020-11-17),
15. 10818755 - Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance (2020-10-27),

Title: The Inventor Profile of Daniel J Connelly

Introduction: Daniel J Connelly is a renowned inventor based in Redwood City, California. He is known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Daniel J Connelly holds several patents in the areas of technology, healthcare, and consumer products. His most recent patents focus on advancements in artificial intelligence and sustainable energy solutions.

Career Highlights: With a career spanning over two decades, Daniel J Connelly has worked with leading tech companies and research institutions to bring his inventions to life. He has a proven track record of turning visionary ideas into practical applications.

Collaborations: Throughout his career, Daniel J Connelly has collaborated with top engineers, scientists, and designers to push the boundaries of innovation. His ability to work in multidisciplinary teams has led to the development of cutting-edge technologies.

Conclusion: Daniel J Connelly's passion for innovation and his dedication to creating a positive impact on society make him a standout figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…