The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Nov. 16, 2018
Atomera Incorporated, Los Gatos, CA (US);
Daniel Connelly, San Francisco, CA (US);
Marek Hytha, Brookline, MA (US);
Hideki Takeuchi, San Jose, CA (US);
Richard Burton, Phoenix, AZ (US);
Robert J. Mears, Wellesley, MA (US);
ATOMERA INCORPORATED, Los Gatos, CA (US);
Abstract
A semiconductor device may include a semiconductor layer and at least one contact in the semiconductor layer. The contact may include at least one oxygen monolayer constrained within a crystal lattice of adjacent semiconductor portions of the semiconductor layer and spaced apart from a surface of the semiconductor layer by between one and four monolayers, and a metal layer on the surface of the semiconductor layer above the at least one oxygen monolayer. The semiconductor portion between the oxygen monolayer and the metal layer may have a dopant concentration of 1×10atoms/cmor greater.